A Novel Variation of Lateral Doping Technique in SOI LDMOS With Circular Layout
نویسندگان
چکیده
منابع مشابه
Linearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances
A linearly graded doping drift region structure, a novel lateral voltage-sustained layer used for improvement of reduced surface field (RESURF) LDMOS transistor performance has been evaluated theoretically, numerically and experimentally in this paper for the first time. Due to the coupling effect of the two-dimensional (2D) electrical field, it is found from the theory developed here that the ...
متن کاملA Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications
This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...
متن کاملprevalence of atopic dermatitis in children with type 1 diabetes mellitus in southeastern of iran (kerman province): a case-control study
چکیده ندارد.
15 صفحه اولwuthering heights and the concept of marality/a sociological study of the novel
to discuss my point, i have collected quite a number of articles, anthologies, and books about "wuthering heights" applying various ideas and theories to this fantastic story. hence, i have come to believe that gadamer and jauss are rightful when they claim that "the individaul human mind is the center and origin of all meaning," 3 that reading literature is a reader-oriented activity, that it ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2018
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2018.2808193